NPN-Transistor BDT64C, 12A, TO-220, TO-220, 120V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 120V. Assembly/installation: PCB through-hole mounting. BE diode: yes. CE diode: yes. Darlington transistor?: yes. FT: 10 MHz. Function: NF-L. Ic(pulse): 20A. Max hFE gain: 1500. Minimum hFE gain: 750. Note: 3k Ohms (R1), 45 Ohms (R2). Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Quantity per case: 2. Saturation voltage VCE(sat): 2V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BDT65C. Technology: Darlington transistor. Temperature: +150°C. Tf(max): 2.5us. Tf(min): 0.5us. Type of transistor: PNP. Vcbo: 120V. Vebo: 2.5V. Original product from manufacturer: Philips Semiconductors. Quantity in stock updated on 10/31/2025, 09:12