NPN-Transistor BDP950, SOT-223, TO-264, -60V, 60V, 3A

NPN-Transistor BDP950, SOT-223, TO-264, -60V, 60V, 3A

Quantity
Unit price
1-49
1.11$
50+
0.92$
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Quantity in stock: 785

NPN-Transistor BDP950, SOT-223, TO-264, -60V, 60V, 3A. Housing: SOT-223. Housing (JEDEC standard): TO-264. Collector-Emitter Voltage VCEO: -60V. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 3A. Bandwidth MHz: 100MHz. Collector-Base Voltage VCBO: -60V. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Current Max 1: -3A. Cutoff frequency ft [MHz]: 100 MHz. DC Collector/Base Gain hFE min.: 25. Information: -. Manufacturer's marking: BDP950. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 5W. Mounting Type: SMD. Number of terminals: 3. Polarity: PNP. Power: 3W. RoHS: yes. Series: BDP. Type: transistor for low power applications. Original product from manufacturer: Infineon. Quantity in stock updated on 11/02/2025, 20:24

Technical documentation (PDF)
BDP950
23 parameters
Housing
SOT-223
Housing (JEDEC standard)
TO-264
Collector-Emitter Voltage VCEO
-60V
Collector-emitter voltage Uceo [V]
60V
Collector current Ic [A], max.
3A
Bandwidth MHz
100MHz
Collector-Base Voltage VCBO
-60V
Component family
PNP power transistor
Configuration
surface-mounted component (SMD)
Current Max 1
-3A
Cutoff frequency ft [MHz]
100 MHz
DC Collector/Base Gain hFE min.
25
Manufacturer's marking
BDP950
Max temperature
+150°C.
Maximum dissipation Ptot [W]
5W
Mounting Type
SMD
Number of terminals
3
Polarity
PNP
Power
3W
RoHS
yes
Series
BDP
Type
transistor for low power applications
Original product from manufacturer
Infineon