NPN-Transistor BD682, TO-126, SOT-32, -100V, 4A, 100V, 4A, 100V. Housing: TO-126. Housing (JEDEC standard): SOT-32. Collector-Emitter Voltage VCEO: -100V. Collector current: 4A. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 4A. Collector/emitter voltage Vceo: 100V. Assembly/installation: THT. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. Built-in diode: yes. CE diode: yes. Collector current Ic [A]: 4A. Collector-Base Voltage VCBO: -100V. Component family: Darlington PNP Power Transistor. Conditioning: tubus. Configuration: PCB through-hole mounting. Current Max 1: -4A. Cutoff frequency ft [MHz]: -. DC Collector/Base Gain hFE min.: 750. Darlington transistor?: yes. FT: 10 MHz. Function: NF-L. Gain hfe: 750. Information: -. MSL: -. Manufacturer's marking: BD682. Max hFE gain: -. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 40W. Minimum hFE gain: 750. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Polarity: bipolar. Power: 40W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Series: BD682. Spec info: complementary transistor (pair) BD681. Type of transistor: PNP. Type: Darlington transistor. Voltage (collector - emitter): 100V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 09:12