NPN transistor BD679, TO-126, 80V, 4A. Housing: TO-126. Collector-Emitter Voltage VCEO: 80V. Collector current Ic [A], max.: 4A. Assembly/installation: THT. Collector current Ic [A]: 4A. Collector-Base Voltage VCBO: 80V. Collector-emitter voltage Uceo [V]: 80V. Component family: Darlington NPN Power Transistor. Conditioning: tubus. Configuration: PCB through-hole mounting. Current Max 1: 4A. Cutoff frequency ft [MHz]: -. DC Collector/Base Gain hFE min.: 750. Gain hfe: 750. Housing (JEDEC standard): SOT-32. Information: -. MSL: -. Manufacturer's marking: BD679. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 40W. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Polarity: bipolar. Power: 40W. RoHS: yes. Series: BD679. Type of transistor: Darlington transistor. Type: Darlington transistor. Voltage (collector - emitter): 80V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/06/2025, 22:14