NPN-Transistor BD442, TO-126 (TO-225, SOT-32), SOT-32, 80V, 4A, 4A, TO-126, 80V. Housing: TO-126 (TO-225, SOT-32). Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 4A. Collector current: 4A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Component family: PNP power transistor. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: 3 MHz. Darlington transistor?: no. FT: 3 MHz. Function: PNP TRANSISTOR 80V 2A. Ic(pulse): 7A. Manufacturer's marking: BD442. Max hFE gain: 130. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 36W. Minimum hFE gain: 20. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 36W. Production date: 1449. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.8V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BD441. Temperature: +150°C. Type of transistor: PNP. Vcbo: 80V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 09:12