NPN-Transistor BD244CG, TO-220, 6A, -100V, TO-220, 100V. Housing: TO-220. Collector current: 6A. Collector-Emitter Voltage VCEO: -100V. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 3MHz. CE diode: no. Collector current Ic [A]: 6A. Collector-Base Voltage VCBO: -100V. Current Max 1: -6A. DC Collector/Base Gain hFE min.: 20. FT: 3 MHz. Frequency: 3MHz. Ic(pulse): 10A. Information: -. MSL: -. Max frequency: 3MHz. Max hFE gain: 30. Minimum hFE gain: 15. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Operating temperature: -65°C...+150°C. Packaging: tubus. Pd (Power Dissipation, Max): 65W. Polarity: bipolar. Power: 65W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1.5V. Semiconductor material: silicon. Series: BD. Spec info: complementary transistor (pair) BD243C. Type of transistor: PNP. Type: Power. Vcbo: 100V. Vebo: 5V. Voltage (collector - emitter): 100V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:12