NPN transistor BD241C, TO-220, 5A, 100V, 3A, TO-220, 100V

NPN transistor BD241C, TO-220, 5A, 100V, 3A, TO-220, 100V

Quantity
Unit price
1-4
0.66$
5-24
0.57$
25-49
0.50$
50-99
0.44$
100+
0.36$
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Equivalence available
Quantity in stock: 75

NPN transistor BD241C, TO-220, 5A, 100V, 3A, TO-220, 100V. Housing: TO-220. Collector current: 5A. Collector-Emitter Voltage VCEO: 100V. Collector current Ic [A], max.: 3A. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 3MHz. CE diode: no. Collector current Ic [A]: 3A. Collector-Base Voltage VCBO: 115V. Collector-emitter voltage Uceo [V]: 100V. Component family: NPN power transistor. Conditioning: tubus. Configuration: PCB through-hole mounting. Current Max 1: 3A. Cutoff frequency ft [MHz]: -. DC Collector/Base Gain hFE min.: 10. FT: 3 MHz. Frequency: 3MHz. Function: NF-L. Housing (JEDEC standard): TO-220AB. Ic(pulse): 8A. Information: -. MSL: -. Manufacturer's marking: BD241C. Max frequency: 3MHz. Max hFE gain: 25. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 40W. Maximum saturation voltage VCE(sat): 1.2V. Minimum hFE gain: 10. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 40W. Polarity: bipolar. Power: 40W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Series: BD. Spec info: complementary transistor (pair) BD242C. Type of transistor: NPN. Type: Power. Vcbo: 115V. Vebo: 5V. Voltage (collector - emitter): 100V. Original product from manufacturer: Cdil. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
BD241C
48 parameters
Housing
TO-220
Collector current
5A
Collector-Emitter Voltage VCEO
100V
Collector current Ic [A], max.
3A
Housing (according to data sheet)
TO-220
Collector/emitter voltage Vceo
100V
Assembly/installation
PCB through-hole mounting
BE diode
no
Bandwidth MHz
3MHz
CE diode
no
Collector current Ic [A]
3A
Collector-Base Voltage VCBO
115V
Collector-emitter voltage Uceo [V]
100V
Component family
NPN power transistor
Conditioning
tubus
Configuration
PCB through-hole mounting
Current Max 1
3A
DC Collector/Base Gain hFE min.
10
FT
3 MHz
Frequency
3MHz
Function
NF-L
Housing (JEDEC standard)
TO-220AB
Ic(pulse)
8A
Manufacturer's marking
BD241C
Max frequency
3MHz
Max hFE gain
25
Max temperature
+150°C.
Maximum dissipation Ptot [W]
40W
Maximum saturation voltage VCE(sat)
1.2V
Minimum hFE gain
10
Mounting Type
PCB through-hole mounting
Number of terminals
3
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
40W
Polarity
bipolar
Power
40W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Series
BD
Spec info
complementary transistor (pair) BD242C
Type of transistor
NPN
Type
Power
Vcbo
115V
Vebo
5V
Voltage (collector - emitter)
100V
Original product from manufacturer
Cdil

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