NPN-Transistor BD238, TO-126 (TO-225, SOT-32), SOT-32, -80V, 80V, 2A, 2A, TO-126, 80V

NPN-Transistor BD238, TO-126 (TO-225, SOT-32), SOT-32, -80V, 80V, 2A, 2A, TO-126, 80V

Quantity
Unit price
1-4
0.45$
5-24
0.37$
25-49
0.38$
50-99
0.28$
100+
0.21$
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Quantity in stock: 133

NPN-Transistor BD238, TO-126 (TO-225, SOT-32), SOT-32, -80V, 80V, 2A, 2A, TO-126, 80V. Housing: TO-126 (TO-225, SOT-32). Housing (JEDEC standard): SOT-32. Collector-Emitter Voltage VCEO: -80V. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 2A. Collector current: 2A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 3MHz. CE diode: no. Collector current Ic [A]: 2A. Collector-Base Voltage VCBO: -100V. Component family: PNP power transistor. Conditioning unit: 50. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Current Max 1: -2A. Cutoff frequency ft [MHz]: -. DC Collector/Base Gain hFE min.: 25. FT: 3 MHz. Frequency: 3MHz. Function: Audio, power linear and switching applications. Gain hfe: 25...40. Ic(pulse): 6A. Information: -. MSL: -. Manufacturer's marking: BD238. Max hFE gain: 40. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 25W. Minimum hFE gain: 25. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Polarity: bipolar. Power: 25W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.6V. Semiconductor material: silicon. Series: BD. Spec info: complementary transistor (pair) BD237. Temperature: +150°C. Type of transistor: PNP. Type: Power. Vcbo: 100V. Vebo: 5V. Voltage (collector - emitter): 100V, 80V. Original product from manufacturer: Cdil. Quantity in stock updated on 10/31/2025, 09:12

Technical documentation (PDF)
BD238
49 parameters
Housing
TO-126 (TO-225, SOT-32)
Housing (JEDEC standard)
SOT-32
Collector-Emitter Voltage VCEO
-80V
Collector-emitter voltage Uceo [V]
80V
Collector current Ic [A], max.
2A
Collector current
2A
Housing (according to data sheet)
TO-126
Collector/emitter voltage Vceo
80V
Assembly/installation
PCB through-hole mounting
BE diode
no
Bandwidth MHz
3MHz
CE diode
no
Collector current Ic [A]
2A
Collector-Base Voltage VCBO
-100V
Component family
PNP power transistor
Conditioning unit
50
Conditioning
plastic tube
Configuration
PCB through-hole mounting
Current Max 1
-2A
DC Collector/Base Gain hFE min.
25
FT
3 MHz
Frequency
3MHz
Function
Audio, power linear and switching applications
Gain hfe
25...40
Ic(pulse)
6A
Manufacturer's marking
BD238
Max hFE gain
40
Max temperature
+150°C.
Maximum dissipation Ptot [W]
25W
Minimum hFE gain
25
Mounting Type
PCB through-hole mounting
Number of terminals
3
Number of terminals
3
Pd (Power Dissipation, Max)
25W
Polarity
bipolar
Power
25W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.6V
Semiconductor material
silicon
Series
BD
Spec info
complementary transistor (pair) BD237
Temperature
+150°C
Type of transistor
PNP
Type
Power
Vcbo
100V
Vebo
5V
Voltage (collector - emitter)
100V, 80V
Original product from manufacturer
Cdil