NPN transistor BD237, TO-126 (TO-225, SOT-32), 80V, 2A, 2A, TO-126, 80V. Housing: TO-126 (TO-225, SOT-32). Collector-Emitter Voltage VCEO: 80V. Collector current Ic [A], max.: 2A. Collector current: 2A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 3MHz. CE diode: no. Collector current Ic [A]: 2A. Collector-Base Voltage VCBO: 100V. Collector-emitter voltage Uceo [V]: 80V. Component family: NPN power transistor. Conditioning unit: 50. Conditioning: tubus. Configuration: PCB through-hole mounting. Current Max 1: 2A. Cutoff frequency ft [MHz]: -. DC Collector/Base Gain hFE min.: 25. FT: 3 MHz. Frequency: 3MHz. Function: NF-L. Housing (JEDEC standard): SOT-32. Ic(pulse): 6A. Information: -. MSL: -. Manufacturer's marking: BD237. Max hFE gain: 40. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 25W. Maximum saturation voltage VCE(sat): 0.6V. Minimum hFE gain: 25. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Polarity: bipolar. Power: 25W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): -. Semiconductor material: silicon. Series: BD. Spec info: complementary transistor (pair) BD238. Type of transistor: NPN. Type: Power. Vcbo: 100V. Voltage (collector - emitter): 100V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/06/2025, 09:45