NPN-Transistor BD140-CDIL, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 80V

NPN-Transistor BD140-CDIL, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 80V

Quantity
Unit price
1-4
0.21$
5-24
0.17$
25-49
0.15$
50-99
0.14$
100+
0.12$
Equivalence available
Quantity in stock: 355

NPN-Transistor BD140-CDIL, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. FT: 50 MHz. Function: NF-L. Ic(pulse): 2A. Max hFE gain: 250. Minimum hFE gain: 25. Number of terminals: 3. Operating temperature: -55°C to +150°C. Pd (Power Dissipation, Max): 12.5W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.5V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BD139. Technology: 'Epitaxial Planar Transistor'. Temperature: +150°C. Type of transistor: PNP. Vcbo: 100V. Vebo: 5V. Original product from manufacturer: Cdil. Quantity in stock updated on 10/31/2025, 09:12

BD140-CDIL
26 parameters
Collector current
1.5A
Housing
TO-126 (TO-225, SOT-32)
Housing (according to data sheet)
TO-126
Collector/emitter voltage Vceo
80V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
FT
50 MHz
Function
NF-L
Ic(pulse)
2A
Max hFE gain
250
Minimum hFE gain
25
Number of terminals
3
Operating temperature
-55°C to +150°C
Pd (Power Dissipation, Max)
12.5W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.5V
Semiconductor material
silicon
Spec info
complementary transistor (pair) BD139
Technology
'Epitaxial Planar Transistor'
Temperature
+150°C
Type of transistor
PNP
Vcbo
100V
Vebo
5V
Original product from manufacturer
Cdil

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