NPN-Transistor BCX42, 0.8A, SOT-23 ( TO-236 ), SOT-23, 125V. Collector current: 0.8A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 125V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Cost): 12pF. FT: 150 MHz. Function: PNP transistor. for AF and switching applications. Ic(pulse): 1A. Marking on the case: DKs. Max hFE gain: 63. Maximum saturation voltage VCE(sat): 0.9V. Minimum hFE gain: 25. Operating temperature: -65...150°C. Pd (Power Dissipation, Max): 0.33W. Quantity per case: 1. Semiconductor material: silicon. Spec info: complementary transistor (pair) BCX41. Type of transistor: PNP. Vcbo: 125V. Vebo: 5V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 08:13