NPN transistor BCX41E6327, 0.8A, SOT-23 ( TO-236 ), SOT-23, 125V

NPN transistor BCX41E6327, 0.8A, SOT-23 ( TO-236 ), SOT-23, 125V

Quantity
Unit price
1-4
0.18$
5-49
0.15$
50-99
0.13$
100-199
0.12$
200+
0.10$
Quantity in stock: 231

NPN transistor BCX41E6327, 0.8A, SOT-23 ( TO-236 ), SOT-23, 125V. Collector current: 0.8A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 125V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Cost): 12pF. FT: 100 MHz. Function: NPN-transistor. AF applications and switching. Ic(pulse): 1A. Marking on the case: EKs. Max hFE gain: 63. Maximum saturation voltage VCE(sat): 0.9V. Minimum hFE gain: 25. Operating temperature: -65...150°C. Pd (Power Dissipation, Max): 0.33W. Quantity per case: 1. Semiconductor material: silicon. Spec info: complementary transistor (pair) BCX42. Type of transistor: NPN. Vcbo: 125V. Vebo: 5V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
BCX41E6327
24 parameters
Collector current
0.8A
Housing
SOT-23 ( TO-236 )
Housing (according to data sheet)
SOT-23
Collector/emitter voltage Vceo
125V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
CE diode
no
Cost)
12pF
FT
100 MHz
Function
NPN-transistor
Ic(pulse)
1A
Marking on the case
EKs
Max hFE gain
63
Maximum saturation voltage VCE(sat)
0.9V
Minimum hFE gain
25
Operating temperature
-65...150°C
Pd (Power Dissipation, Max)
0.33W
Quantity per case
1
Semiconductor material
silicon
Spec info
complementary transistor (pair) BCX42
Type of transistor
NPN
Vcbo
125V
Vebo
5V
Original product from manufacturer
Infineon Technologies