NPN-Transistor BCR562E6327HTSA1, 500mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 500mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Assembly/installation: surface-mounted component (SMD). BE diode: no. BE resistor: 4.7k Ohms. CE diode: no. FT: 150 MHz. Function: PNP Silicon Digital Transistor. Marking on the case: XUs. Minimum hFE gain: 50. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.33W. Quantity per case: 1. Resistor B: 4.7k Ohms. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Type of transistor: PNP. Vcbo: 50V. Original product from manufacturer: Infineon Technologies. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 20:34