NPN transistor BCP56T1G, SOT-223, 80V, 1A

NPN transistor BCP56T1G, SOT-223, 80V, 1A

Quantity
Unit price
1-99
0.25$
100+
0.18$
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Quantity in stock: 1468

NPN transistor BCP56T1G, SOT-223, 80V, 1A. Housing: SOT-223. Collector-Emitter Voltage VCEO: 80V. Collector current Ic [A], max.: 1A. Bandwidth MHz: 130MHz. Collector-Base Voltage VCBO: 100V. Collector-emitter voltage Uceo [V]: 80V. Component family: NPN power transistor. Configuration: surface-mounted component (SMD). Current Max 1: 1A. Cutoff frequency ft [MHz]: 130 MHz. DC Collector/Base Gain hFE min.: 25. Housing (JEDEC standard): TO-261. Information: -. Manufacturer's marking: BH. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.5W. Mounting Type: SMD. Number of terminals: 3. Polarity: NPN. Power: 1.5W. RoHS: yes. Series: BCP. Type: transistor for low power applications. Original product from manufacturer: Onsemi. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
BCP56T1G
23 parameters
Housing
SOT-223
Collector-Emitter Voltage VCEO
80V
Collector current Ic [A], max.
1A
Bandwidth MHz
130MHz
Collector-Base Voltage VCBO
100V
Collector-emitter voltage Uceo [V]
80V
Component family
NPN power transistor
Configuration
surface-mounted component (SMD)
Current Max 1
1A
Cutoff frequency ft [MHz]
130 MHz
DC Collector/Base Gain hFE min.
25
Housing (JEDEC standard)
TO-261
Manufacturer's marking
BH
Max temperature
+150°C.
Maximum dissipation Ptot [W]
1.5W
Mounting Type
SMD
Number of terminals
3
Polarity
NPN
Power
1.5W
RoHS
yes
Series
BCP
Type
transistor for low power applications
Original product from manufacturer
Onsemi