NPN-Transistor BCP53-16, SOT-223 ( TO-226 ), -80V, 1A, SOT-223, 80V. Housing: SOT-223 ( TO-226 ). Collector-Emitter Voltage VCEO: -80V. Collector current: 1A. Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 80V. Assembly/installation: surface-mounted component (SMD). BE diode: no. Bandwidth MHz: 50MHz. CE diode: no. Collector-Base Voltage VCBO: -100V. Cost): 25pF. Current Max 1: -1.5A. DC Collector/Base Gain hFE min.: 100. FT: 150MHz. Function: Audio, telephony and automotive applications. Ic(pulse): 2A. Information: -. Marking on the case: BCP 5316. Max hFE gain: 250. Maximum saturation voltage VCE(sat): 0.5V. Minimum hFE gain: 100. Mounting Type: SMD. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 2W. Polarity: PNP. Power: 1.5W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Series: BCP. Spec info: complementary transistor (pair) BCP56-16. Type of transistor: PNP. Type: transistor for low power applications. Vcbo: 100V. Vebo: 5V. Original product from manufacturer: Diodes Inc. Quantity in stock updated on 10/31/2025, 08:13