| Quantity in stock: 1381 |
NPN transistor BC868, SOT-89, 2A, SOT89, 20V
Quantity
Unit price
1-4
0.31$
5-49
0.27$
50-99
0.23$
100-199
0.21$
200+
0.19$
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| Equivalence available | |
| Quantity in stock: 978 |
NPN transistor BC868, SOT-89, 2A, SOT89, 20V. Housing: SOT-89. Collector current: 2A. Housing (according to data sheet): SOT89. Collector/emitter voltage Vceo: 20V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Collector current Ic [A]: 1A, 2A. Cost): 22pF. FT: 170 MHz. Frequency: 60MHz, 170MHz. Function: -. Ic(pulse): 3A. Marking on the case: CAC. Max hFE gain: 375. Maximum saturation voltage VCE(sat): 0.5V. Minimum hFE gain: 85. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 1.35W. Polarity: bipolar. Power: 950mW. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: screen printing/SMD code CAC. Type of transistor: NPN. Vcbo: 32V. Vebo: 5V. Voltage (collector - emitter): 25V, 20V. Original product from manufacturer: Nxp Semiconductors. Quantity in stock updated on 11/06/2025, 09:45
BC868
29 parameters
Housing
SOT-89
Collector current
2A
Housing (according to data sheet)
SOT89
Collector/emitter voltage Vceo
20V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
CE diode
no
Collector current Ic [A]
1A, 2A
Cost)
22pF
FT
170 MHz
Frequency
60MHz, 170MHz
Ic(pulse)
3A
Marking on the case
CAC
Max hFE gain
375
Maximum saturation voltage VCE(sat)
0.5V
Minimum hFE gain
85
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
1.35W
Polarity
bipolar
Power
950mW
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
screen printing/SMD code CAC
Type of transistor
NPN
Vcbo
32V
Vebo
5V
Voltage (collector - emitter)
25V, 20V
Original product from manufacturer
Nxp Semiconductors