NPN-Transistor BC860C, SOT-23 ( TO-236 ), 0.1A, SOT-23 ( TO236 ), 45V. Housing: SOT-23 ( TO-236 ). Collector current: 0.1A. Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. Assembly/installation: surface-mounted component (SMD). BE diode: no. C(in): 10pF. CE diode: no. Collector current Ic [A]: 100mA. Cost): 4.5pF. Darlington transistor?: no. FT: 100 MHz. Frequency: 100MHz, 150MHz. Function: general purpose. Marking on the case: 4G. Max hFE gain: 800. Maximum saturation voltage VCE(sat): 0.65V. Minimum hFE gain: 420. Note: complementary transistor (pair) BC850C. Number of terminals: 3. Operating temperature: -68...+150°C. Polarity: bipolar. Power: 0.25W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.075V. Semiconductor material: silicon. Spec info: screen printing/SMD code 4G. Type of transistor: PNP. Vcbo: 50V. Vebo: 5V. Voltage (collector - emitter): 50V, 45V. Original product from manufacturer: Nexperia. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 20:34