NPN-Transistor BC859B, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v

NPN-Transistor BC859B, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v

Quantity
Unit price
10-49
0.0327$
50-99
0.0291$
100+
0.0256$
Equivalence available
Quantity in stock: 71
Minimum: 10

NPN-Transistor BC859B, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 30 v. Assembly/installation: surface-mounted component (SMD). FT: 100 MHz. Function: general purpose. Ic(pulse): 200mA. Marking on the case: 3F. Max hFE gain: 475. Minimum hFE gain: 220. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.25W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: SMD 3F. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 30 v. Vebo: 5V. Original product from manufacturer: Diodes Inc. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 20:34

Technical documentation (PDF)
BC859B
25 parameters
Collector current
100mA
Housing
SOT-23 ( TO-236 )
Housing (according to data sheet)
SOT-23 ( TO236 )
Collector/emitter voltage Vceo
30 v
Assembly/installation
surface-mounted component (SMD)
FT
100 MHz
Function
general purpose
Ic(pulse)
200mA
Marking on the case
3F
Max hFE gain
475
Minimum hFE gain
220
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.25W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.3V
Semiconductor material
silicon
Spec info
SMD 3F
Technology
'Epitaxial Planar Transistor'
Type of transistor
PNP
Vcbo
30 v
Vebo
5V
Original product from manufacturer
Diodes Inc
Minimum quantity
10

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