NPN-Transistor BC856B, SOT-23 ( TO-236 ), 65V, 100mA, SOT-23 ( TO236 ), 65V. Housing: SOT-23 ( TO-236 ). Collector-Emitter Voltage VCEO: 65V. Collector current: 100mA. Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 65V. Assembly/installation: surface-mounted component (SMD). BE diode: no. Bandwidth MHz: 100MHz. CE diode: no. Collector current Ic [A]: 100mA. Collector-Base Voltage VCBO: 80V. Cost): 4.5pF. DC Collector/Base Gain hFE min.: 220. Equivalents: ON Semiconductor BC856BLT1G. FT: 100 MHz. Gain hfe: 290. Ic(pulse): 200mA. Information: -. Marking on the case: 3B. Max hFE gain: 475. Minimum hFE gain: 220. Mounting Type: SMD. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 300mW. Polarity: bipolar. Power: 0.25W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.065V. Semiconductor material: silicon. Series: BC. Spec info: screen printing/SMD code 3B. Type of transistor: PNP. Type: transistor for low power applications. Vcbo: 80V. Vebo: 5V. Voltage (collector - emitter): 80V, 65V. Original product from manufacturer: Nexperia. Minimum quantity: 10. Quantity in stock updated on 10/31/2025, 08:13