NPN-Transistor BC856A, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 65V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 65V. Assembly/installation: surface-mounted component (SMD). FT: 100 MHz. Ic(pulse): 200mA. Marking on the case: 3A. Max hFE gain: 250. Minimum hFE gain: 125. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.25W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.075V. Semiconductor material: silicon. Spec info: screen printing/SMD code 3A. Type of transistor: PNP. Vcbo: 80V. Vebo: 5V. Original product from manufacturer: Philips Semiconductors. Minimum quantity: 10. Quantity in stock updated on 10/31/2025, 08:13