NPN transistor BC847C, SOT-23 ( TO-236 ), 0.1A, SOT-23, 45V

NPN transistor BC847C, SOT-23 ( TO-236 ), 0.1A, SOT-23, 45V

Quantity
Unit price
10-24
0.0436$
25-99
0.0326$
100-249
0.0281$
250-499
0.0258$
500+
0.0203$
+14850 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 2467
Minimum: 10

NPN transistor BC847C, SOT-23 ( TO-236 ), 0.1A, SOT-23, 45V. Housing: SOT-23 ( TO-236 ). Collector current: 0.1A. Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 45V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Collector current Ic [A]: 100mA. Cost): 4.5pF. FT: 100 MHz. Frequency: 100MHz. Function: general purpose. Max hFE gain: 800. Maximum saturation voltage VCE(sat): 0.6V. Minimum hFE gain: 250. Pd (Power Dissipation, Max): 0.225W. Polarity: bipolar. Power: 200mW. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.25V. Semiconductor material: silicon. Spec info: screen printing/SMD code 1G. Type of transistor: NPN. Vcbo: 50V. Vebo: 6V. Voltage (collector - emitter): 45V. Original product from manufacturer: ON Semiconductor. Minimum quantity: 10. Quantity in stock updated on 11/06/2025, 09:45

Technical documentation (PDF)
BC847C
29 parameters
Housing
SOT-23 ( TO-236 )
Collector current
0.1A
Housing (according to data sheet)
SOT-23
Collector/emitter voltage Vceo
45V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
CE diode
no
Collector current Ic [A]
100mA
Cost)
4.5pF
FT
100 MHz
Frequency
100MHz
Function
general purpose
Max hFE gain
800
Maximum saturation voltage VCE(sat)
0.6V
Minimum hFE gain
250
Pd (Power Dissipation, Max)
0.225W
Polarity
bipolar
Power
200mW
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.25V
Semiconductor material
silicon
Spec info
screen printing/SMD code 1G
Type of transistor
NPN
Vcbo
50V
Vebo
6V
Voltage (collector - emitter)
45V
Original product from manufacturer
ON Semiconductor
Minimum quantity
10