NPN-Transistor BC640-16, TO-92, 1A, TO-92, 80V

NPN-Transistor BC640-16, TO-92, 1A, TO-92, 80V

Quantity
Unit price
1-4
0.17$
5-49
0.14$
50-99
0.12$
100-199
0.11$
200+
0.0951$
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Quantity in stock: 136

NPN-Transistor BC640-16, TO-92, 1A, TO-92, 80V. Housing: TO-92. Collector current: 1A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. C(in): 110pF. CE diode: no. Collector current Ic [A]: 1A. Conditioning: Ammo Pack. Cost): 9pF. Darlington transistor?: no. FT: 150 MHz. Frequency: 150MHz. Gain hfe: 100...250. Max hFE gain: 250. Maximum saturation voltage VCE(sat): 0.5V. Minimum hFE gain: 100. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 800mW. Polarity: bipolar. Power: 0.8/2.75W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: complementary transistor (pair) BC639-16. Type of transistor: PNP. Vcbo: 80V. Vebo: 5V. Voltage (collector - emitter): 80V. Original product from manufacturer: Cdil. Quantity in stock updated on 10/31/2025, 08:13

BC640-16
31 parameters
Housing
TO-92
Collector current
1A
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
80V
Assembly/installation
PCB through-hole mounting
BE diode
no
C(in)
110pF
CE diode
no
Collector current Ic [A]
1A
Conditioning
Ammo Pack
Cost)
9pF
Darlington transistor?
no
FT
150 MHz
Frequency
150MHz
Gain hfe
100...250
Max hFE gain
250
Maximum saturation voltage VCE(sat)
0.5V
Minimum hFE gain
100
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
800mW
Polarity
bipolar
Power
0.8/2.75W
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Spec info
complementary transistor (pair) BC639-16
Type of transistor
PNP
Vcbo
80V
Vebo
5V
Voltage (collector - emitter)
80V
Original product from manufacturer
Cdil