NPN transistor BC639, TO-92, 1A, 1A, TO-92, 80V. Housing: TO-92. Collector current Ic [A], max.: 1A. Collector current: 1A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. C(in): 50pF. CE diode: no. Collector current Ic [A]: 1A. Collector-emitter voltage Uceo [V]: 80V. Component family: NPN transistor. Configuration: PCB through-hole mounting. Cost): 7pF. Cutoff frequency ft [MHz]: 200 MHz. FT: 130 MHz. Frequency: 200MHz. Gain hfe: 40...250. Housing (JEDEC standard): TO-226AA. Manufacturer's marking: BC639. Max hFE gain: 160. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.625W. Minimum hFE gain: 40. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Polarity: bipolar. Power: 0.8/2.75W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.5V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BC640. Type of transistor: NPN. Vcbo: 80V. Voltage (collector - emitter): 80V. Original product from manufacturer: Lge Technology. Quantity in stock updated on 10/31/2025, 08:13