NPN-Transistor BC556B, TO-92, TO-226, -65V, 65V, 100mA, 100mA, TO-92, 80V. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-Emitter Voltage VCEO: -65V. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 100MHz. C(in): 9pF. CE diode: no. Collector current Ic [A]: 100mA. Collector-Base Voltage VCBO: -80V. Component family: PNP transistor. Conditioning: -. Configuration: PCB through-hole mounting. Cost): 6pF. Cutoff frequency ft [MHz]: 150 MHz. DC Collector/Base Gain hFE min.: 200. FT: 100 MHz. Gain hfe: 200. Ic(pulse): 200mA. Information: -. MSL: -. Manufacturer's marking: BC556B. Max hFE gain: 450. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.5W. Minimum hFE gain: 200. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Operating temperature: -...+150°C. Packaging: -. Pd (Power Dissipation, Max): 0.5W. Polarity: bipolar. Power: 0.5W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Series: BC. Spec info: complementary transistor (pair) BC546B. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Type: transistor for low power applications. Vcbo: 80V. Vebo: 5V. Voltage (collector - emitter): 65V. Original product from manufacturer: Cdil. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 20:34