NPN transistor BC337-40, TO-92, 45V, 800mA, 0.8A, TO-92, 45V

NPN transistor BC337-40, TO-92, 45V, 800mA, 0.8A, TO-92, 45V

Quantity
Unit price
10-49
0.0527$
50-99
0.0458$
100-199
0.0415$
200+
0.0352$
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Quantity in stock: 3784
Minimum: 10

NPN transistor BC337-40, TO-92, 45V, 800mA, 0.8A, TO-92, 45V. Housing: TO-92. Collector-Emitter Voltage VCEO: 45V. Collector current Ic [A], max.: 800mA. Collector current: 0.8A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 100MHz. CE diode: no. Collector current Ic [A]: 800mA. Collector-Base Voltage VCBO: 50V. Collector-emitter voltage Uceo [V]: 45V. Component family: NPN transistor. Conditioning: Ammo Pack. Configuration: PCB through-hole mounting. Cost): 12pF. Current Max 1: 0.8A. Cutoff frequency ft [MHz]: 100 MHz. DC Collector/Base Gain hFE min.: 170. FT: 100 MHz. Function: general purpose. Gain hfe: 400. Housing (JEDEC standard): TO-226. Ic(pulse): 1A. Information: -. MSL: -. Manufacturer's marking: BC337-40. Max hFE gain: 630. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.625W. Minimum hFE gain: 250. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.625W. Polarity: bipolar. Power: 0.625W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.7V. Semiconductor material: silicon. Series: BC. Spec info: complementary transistor (pair) BC327-40. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Type: transistor for low power applications. Vcbo: 50V. Vebo: 5V. Voltage (collector - emitter): 45V. Original product from manufacturer: Diotec Semiconductor. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 20:34

Technical documentation (PDF)
BC337-40
51 parameters
Housing
TO-92
Collector-Emitter Voltage VCEO
45V
Collector current Ic [A], max.
800mA
Collector current
0.8A
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
45V
Assembly/installation
PCB through-hole mounting
BE diode
no
Bandwidth MHz
100MHz
CE diode
no
Collector current Ic [A]
800mA
Collector-Base Voltage VCBO
50V
Collector-emitter voltage Uceo [V]
45V
Component family
NPN transistor
Conditioning
Ammo Pack
Configuration
PCB through-hole mounting
Cost)
12pF
Current Max 1
0.8A
Cutoff frequency ft [MHz]
100 MHz
DC Collector/Base Gain hFE min.
170
FT
100 MHz
Function
general purpose
Gain hfe
400
Housing (JEDEC standard)
TO-226
Ic(pulse)
1A
Manufacturer's marking
BC337-40
Max hFE gain
630
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.625W
Minimum hFE gain
250
Mounting Type
PCB through-hole mounting
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.625W
Polarity
bipolar
Power
0.625W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.7V
Semiconductor material
silicon
Series
BC
Spec info
complementary transistor (pair) BC327-40
Technology
'Epitaxial Planar Transistor'
Type of transistor
NPN
Type
transistor for low power applications
Vcbo
50V
Vebo
5V
Voltage (collector - emitter)
45V
Original product from manufacturer
Diotec Semiconductor
Minimum quantity
10