NPN transistor BC337-25, TO-92, 0.8A, TO-92, 45V. Housing: TO-92. Collector current: 0.8A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 800mA. Conditioning: Ammo Pack. Cost): 15pF. FT: 210 MHz. Gain hfe: 250. Ic(pulse): 1A. Max hFE gain: 630. Minimum hFE gain: 100. Number of terminals: 3. Operating temperature: -55...+150°C. Packaging: Ammo Pack. Pd (Power Dissipation, Max): 0.625W. Polarity: bipolar. Power: 0.625W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.7V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BC327-25. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Vcbo: 50V. Vebo: 5V. Voltage (collector - emitter): 45V. Original product from manufacturer: Lge Technology. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 20:34