NPN-Transistor BC328-25, -30V, 0.8A, TO-92, TO-92 ( Ammo Pack ), 30 v

NPN-Transistor BC328-25, -30V, 0.8A, TO-92, TO-92 ( Ammo Pack ), 30 v

Quantity
Unit price
10-49
0.0552$
50-99
0.0469$
100-199
0.0427$
200+
0.0365$
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Equivalence available
Quantity in stock: 249
Minimum: 10

NPN-Transistor BC328-25, -30V, 0.8A, TO-92, TO-92 ( Ammo Pack ), 30 v. Collector-Emitter Voltage VCEO: -30V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 30 v. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. FT: 100 MHz. Ic(pulse): 1A. Max hFE gain: 400. Minimum hFE gain: 160. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.625W. Polarity: PNP. Power: 0.63W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.7V. Semiconductor material: silicon. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 30 v. Vebo: 5V. Original product from manufacturer: Diotec Semiconductor. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 20:34

Technical documentation (PDF)
BC328-25
27 parameters
Collector-Emitter Voltage VCEO
-30V
Collector current
0.8A
Housing
TO-92
Housing (according to data sheet)
TO-92 ( Ammo Pack )
Collector/emitter voltage Vceo
30 v
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
FT
100 MHz
Ic(pulse)
1A
Max hFE gain
400
Minimum hFE gain
160
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.625W
Polarity
PNP
Power
0.63W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.7V
Semiconductor material
silicon
Technology
'Epitaxial Planar Transistor'
Type of transistor
PNP
Vcbo
30 v
Vebo
5V
Original product from manufacturer
Diotec Semiconductor
Minimum quantity
10

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