NPN-Transistor BC303, -60V, 0.5A, TO-39 ( TO-205 ), TO-39, 60V

NPN-Transistor BC303, -60V, 0.5A, TO-39 ( TO-205 ), TO-39, 60V

Quantity
Unit price
1-4
0.78$
5-24
0.67$
25-49
0.57$
50-99
0.52$
100+
0.46$
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Quantity in stock: 44

NPN-Transistor BC303, -60V, 0.5A, TO-39 ( TO-205 ), TO-39, 60V. Collector-Emitter Voltage VCEO: -60V. Collector current: 0.5A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. FT: 0.65 MHz. Max frequency: 75MHz. Max hFE gain: 120. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 0.85W. Polarity: PNP. Power: 0.85W. Quantity per case: 1. Saturation voltage VCE(sat): 0.65V. Semiconductor material: silicon. Technology: EXPITAXIAL PLANAR SILICON TRANSISTOR. Temperature: +175°C. Type of transistor: PNP. Vcbo: 85V. Vebo: 7V. Original product from manufacturer: Cdil. Quantity in stock updated on 10/31/2025, 08:56

Technical documentation (PDF)
BC303
25 parameters
Collector-Emitter Voltage VCEO
-60V
Collector current
0.5A
Housing
TO-39 ( TO-205 )
Housing (according to data sheet)
TO-39
Collector/emitter voltage Vceo
60V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
FT
0.65 MHz
Max frequency
75MHz
Max hFE gain
120
Minimum hFE gain
40
Number of terminals
3
Pd (Power Dissipation, Max)
0.85W
Polarity
PNP
Power
0.85W
Quantity per case
1
Saturation voltage VCE(sat)
0.65V
Semiconductor material
silicon
Technology
EXPITAXIAL PLANAR SILICON TRANSISTOR
Temperature
+175°C
Type of transistor
PNP
Vcbo
85V
Vebo
7V
Original product from manufacturer
Cdil

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