| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |
NPN-Transistor BC212B, -50V, 100mA, TO-92, TO-92, 50V
Quantity
Unit price
10-49
0.0776$
50-99
0.0667$
100-199
0.0571$
200+
0.0446$
| +3333 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Equivalence available | |
| Quantity in stock: 845 |
NPN-Transistor BC212B, -50V, 100mA, TO-92, TO-92, 50V. Collector-Emitter Voltage VCEO: -50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Darlington transistor?: no. FT: 280 MHz. Max frequency: 280MHz. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 350mW. Polarity: PNP. Power: 1W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.1V. Semiconductor material: silicon. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 60V. Vebo: 5V. Original product from manufacturer: Cdil. Minimum quantity: 10. Quantity in stock updated on 10/31/2025, 08:56
BC212B
28 parameters
Collector-Emitter Voltage VCEO
-50V
Collector current
100mA
Housing
TO-92
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
50V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Darlington transistor?
no
FT
280 MHz
Max frequency
280MHz
Max hFE gain
400
Minimum hFE gain
200
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
350mW
Polarity
PNP
Power
1W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.1V
Semiconductor material
silicon
Technology
'Epitaxial Planar Transistor'
Type of transistor
PNP
Vcbo
60V
Vebo
5V
Original product from manufacturer
Cdil
Minimum quantity
10