NPN transistor 2SD667, 1A, TO-92, TO-92MOD ( 2-5J1A ), 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. FT: 140 MHz. Function: Low-Frequency Power Amplifier. Ic(pulse): 2A. Marking on the case: D667. Max hFE gain: 120. Minimum hFE gain: 60. Note: 9mm. Number of terminals: 3. Operating temperature: -50...+150°C. Pd (Power Dissipation, Max): 0.9W. Quantity per case: 1. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SB647. Technology: Silicon NPN Epitaxial. Type of transistor: NPN. Vcbo: 120V. Vebo: 5V. Original product from manufacturer: Hitachi. Quantity in stock updated on 10/31/2025, 09:24