NPN transistor 2SD600K, TO-126 (TO-225, SOT-32), 1A, TO-126, 120V

NPN transistor 2SD600K, TO-126 (TO-225, SOT-32), 1A, TO-126, 120V

Quantity
Unit price
1-4
4.17$
5-24
3.96$
25-49
3.76$
50+
3.54$
Quantity in stock: 8

NPN transistor 2SD600K, TO-126 (TO-225, SOT-32), 1A, TO-126, 120V. Housing: TO-126 (TO-225, SOT-32). Collector current: 1A. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 120V. Assembly/installation: PCB through-hole mounting. Collector current Ic [A]: 1A. FT: 130 MHz. Frequency: 130MHz. Function: Low-Frequency Power Amplifier. Ic(pulse): 2A. Max hFE gain: 320. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 8W. Polarity: bipolar. Power: 8W. Quantity per case: 1. Saturation voltage VCE(sat): 0.15V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SB631K. Temperature: +150°C. Tf(max): 100 ns. Tf(min): 100 ns. Type of transistor: NPN. Vcbo: 120V. Vebo: 5V. Voltage (collector - emitter): 120V. Original product from manufacturer: Sanyo. Quantity in stock updated on 10/31/2025, 09:24

Technical documentation (PDF)
2SD600K
28 parameters
Housing
TO-126 (TO-225, SOT-32)
Collector current
1A
Housing (according to data sheet)
TO-126
Collector/emitter voltage Vceo
120V
Assembly/installation
PCB through-hole mounting
Collector current Ic [A]
1A
FT
130 MHz
Frequency
130MHz
Function
Low-Frequency Power Amplifier
Ic(pulse)
2A
Max hFE gain
320
Minimum hFE gain
20
Number of terminals
3
Pd (Power Dissipation, Max)
8W
Polarity
bipolar
Power
8W
Quantity per case
1
Saturation voltage VCE(sat)
0.15V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SB631K
Temperature
+150°C
Tf(max)
100 ns
Tf(min)
100 ns
Type of transistor
NPN
Vcbo
120V
Vebo
5V
Voltage (collector - emitter)
120V
Original product from manufacturer
Sanyo