| Quantity in stock: 54 |
NPN transistor 2SD2499, 6A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V
Quantity
Unit price
1-4
3.08$
5-9
2.82$
10-24
2.63$
25-49
2.48$
50+
2.21$
| Obsolete product, soon to be removed from the catalog | |
| Out of stock | |
| Equivalence available |
NPN transistor 2SD2499, 6A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 6A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. BE diode: no. BE resistor: 40 Ohms. CE diode: yes. Cost): 95pF. FT: 2 MHz. Function: CTV-HA. Ic(pulse): 12A. Max hFE gain: 25. Minimum hFE gain: 5. Number of terminals: 3. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. Saturation voltage VCE(sat): 5V. Semiconductor material: silicon. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Vcbo: 1500V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 07:46
2SD2499
27 parameters
Collector current
6A
Housing
TO-3PF (SOT399, 2-16E3A)
Housing (according to data sheet)
2-16E3A
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
BE diode
no
BE resistor
40 Ohms
CE diode
yes
Cost)
95pF
FT
2 MHz
Function
CTV-HA
Ic(pulse)
12A
Max hFE gain
25
Minimum hFE gain
5
Number of terminals
3
Operating temperature
-...+150°C
Pd (Power Dissipation, Max)
50W
Quantity per case
1
Saturation voltage VCE(sat)
5V
Semiconductor material
silicon
Technology
'Triple Diffused MESA Type'
Tf(max)
0.6us
Tf(min)
0.3us
Type of transistor
NPN
Vcbo
1500V
Vebo
5V
Original product from manufacturer
Toshiba