NPN transistor 2SD1804, 8A, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V

NPN transistor 2SD1804, 8A, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V

Quantity
Unit price
1-4
3.14$
5-9
2.71$
10-24
2.44$
25-49
2.25$
50+
2.02$
Quantity in stock: 3

NPN transistor 2SD1804, 8A, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V. Collector current: 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Collector/emitter voltage Vceo: 50V. Assembly/installation: surface-mounted component (SMD). FT: 180 MHz. Function: High-Current Switching, low-saturation voltage. Ic(pulse): 12A. Max hFE gain: 400. Minimum hFE gain: 35. Number of terminals: 2. Pd (Power Dissipation, Max): 20W. Quantity per case: 1. Saturation voltage VCE(sat): 0.2V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SB1204. Technology: 'Epitaxial Planar Silicon Transistors'. Temperature: +150°C. Tf(max): 20 ns. Tf(min): 20 ns. Type of transistor: NPN. Vcbo: 60V. Vebo: 6V. Original product from manufacturer: Sanyo. Quantity in stock updated on 10/31/2025, 07:46

Technical documentation (PDF)
2SD1804
24 parameters
Collector current
8A
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 )
Collector/emitter voltage Vceo
50V
Assembly/installation
surface-mounted component (SMD)
FT
180 MHz
Function
High-Current Switching, low-saturation voltage
Ic(pulse)
12A
Max hFE gain
400
Minimum hFE gain
35
Number of terminals
2
Pd (Power Dissipation, Max)
20W
Quantity per case
1
Saturation voltage VCE(sat)
0.2V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SB1204
Technology
'Epitaxial Planar Silicon Transistors'
Temperature
+150°C
Tf(max)
20 ns
Tf(min)
20 ns
Type of transistor
NPN
Vcbo
60V
Vebo
6V
Original product from manufacturer
Sanyo