NPN transistor 2SD1664Q, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 32V

NPN transistor 2SD1664Q, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 32V

Quantity
Unit price
1-4
0.41$
5-9
0.31$
10-24
0.26$
25+
0.23$
Quantity in stock: 850

NPN transistor 2SD1664Q, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 32V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 32V. Assembly/installation: surface-mounted component (SMD). Conditioning unit: 1000. Conditioning: roll. FT: 150 MHz. Function: bipolar transistor. Ic(pulse): 2A. Marking on the case: DAQ. Max hFE gain: 270. Minimum hFE gain: 120. Number of terminals: 3. Operating temperature: +55...+150°C. Pd (Power Dissipation, Max): 0.5W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.15V. Semiconductor material: silicon. Spec info: screen printing/SMD code DAQ. Technology: 'Epitaxial planar type'. Type of transistor: NPN. Vcbo: 40V. Vebo: 5V. Original product from manufacturer: ROHM. Quantity in stock updated on 10/31/2025, 07:46

Technical documentation (PDF)
2SD1664Q
26 parameters
Collector current
1A
Housing
SOT-89 4-Pin ( 3+Tab )
Housing (according to data sheet)
SOT-89
Collector/emitter voltage Vceo
32V
Assembly/installation
surface-mounted component (SMD)
Conditioning unit
1000
Conditioning
roll
FT
150 MHz
Function
bipolar transistor
Ic(pulse)
2A
Marking on the case
DAQ
Max hFE gain
270
Minimum hFE gain
120
Number of terminals
3
Operating temperature
+55...+150°C
Pd (Power Dissipation, Max)
0.5W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.15V
Semiconductor material
silicon
Spec info
screen printing/SMD code DAQ
Technology
'Epitaxial planar type'
Type of transistor
NPN
Vcbo
40V
Vebo
5V
Original product from manufacturer
ROHM