NPN transistor 2SD1623S, 2A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 50V

NPN transistor 2SD1623S, 2A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 50V

Quantity
Unit price
1-4
1.08$
5-24
0.90$
25-49
0.78$
50-99
0.71$
100+
0.61$
Quantity in stock: 57

NPN transistor 2SD1623S, 2A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 50V. Collector current: 2A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 50V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. FT: 150 MHz. Function: High-Current Switching, low-saturation voltage. Ic(pulse): 4A. Marking on the case: DF. Max hFE gain: 280. Minimum hFE gain: 140. Note: complementary transistor (pair) 2SB1123S. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1.5V. Semiconductor material: silicon. Spec info: screen printing/SMD code DF. Technology: 'Epitaxial Planar Silicon Transistor'. Temperature: +150°C. Tf(max): 30 ns. Tf(min): 30 ns. Type of transistor: NPN. Vcbo: 60V. Vebo: 6V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 07:46

Technical documentation (PDF)
2SD1623S
29 parameters
Collector current
2A
Housing
SOT-89 4-Pin ( 3+Tab )
Housing (according to data sheet)
SOT-89
Collector/emitter voltage Vceo
50V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
CE diode
no
FT
150 MHz
Function
High-Current Switching, low-saturation voltage
Ic(pulse)
4A
Marking on the case
DF
Max hFE gain
280
Minimum hFE gain
140
Note
complementary transistor (pair) 2SB1123S
Number of terminals
3
Pd (Power Dissipation, Max)
0.5W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1.5V
Semiconductor material
silicon
Spec info
screen printing/SMD code DF
Technology
'Epitaxial Planar Silicon Transistor'
Temperature
+150°C
Tf(max)
30 ns
Tf(min)
30 ns
Type of transistor
NPN
Vcbo
60V
Vebo
6V
Original product from manufacturer
ON Semiconductor