NPN transistor 2SC5859, 23A, TO-264 ( TOP-3L ), 2-21F2A, 750V

NPN transistor 2SC5859, 23A, TO-264 ( TOP-3L ), 2-21F2A, 750V

Quantity
Unit price
1-4
10.57$
5-9
9.72$
10-24
9.23$
25-49
8.68$
50+
8.01$
Quantity in stock: 1

NPN transistor 2SC5859, 23A, TO-264 ( TOP-3L ), 2-21F2A, 750V. Collector current: 23A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): 2-21F2A. Collector/emitter voltage Vceo: 750V. Assembly/installation: PCB through-hole mounting. Darlington transistor?: no. FT: 2 MHz. Function: For high resolution horizontal deflection, HD TV. Ic(pulse): 46A. Max hFE gain: 55. Minimum hFE gain: 4.5. Number of terminals: 3. Pd (Power Dissipation, Max): 210W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 3V. Semiconductor material: silicon. Technology: 'Triple Diffused MESA Type'. Temperature: +150°C. Tf(max): 0.15us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 1700V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 08:53

Technical documentation (PDF)
2SC5859
25 parameters
Collector current
23A
Housing
TO-264 ( TOP-3L )
Housing (according to data sheet)
2-21F2A
Collector/emitter voltage Vceo
750V
Assembly/installation
PCB through-hole mounting
Darlington transistor?
no
FT
2 MHz
Function
For high resolution horizontal deflection, HD TV
Ic(pulse)
46A
Max hFE gain
55
Minimum hFE gain
4.5
Number of terminals
3
Pd (Power Dissipation, Max)
210W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
3V
Semiconductor material
silicon
Technology
'Triple Diffused MESA Type'
Temperature
+150°C
Tf(max)
0.15us
Tf(min)
0.1us
Type of transistor
NPN
Vcbo
1700V
Vebo
5V
Original product from manufacturer
Toshiba