NPN transistor 2SC5696, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PMLH, 800V

NPN transistor 2SC5696, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PMLH, 800V

Quantity
Unit price
1-4
4.88$
5-9
4.44$
10-24
4.11$
25-49
3.84$
50+
3.48$
Equivalence available
Quantity in stock: 5

NPN transistor 2SC5696, 12A, TO-3PF (SOT399, 2-16E3A), TO-3PMLH, 800V. Collector current: 12A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PMLH. Collector/emitter voltage Vceo: 800V. Assembly/installation: PCB through-hole mounting. BE resistor: yes. CE diode: yes. Darlington transistor?: no. FT: kHz. Function: High-Speed. Ic(pulse): 36A. Marking on the case: C5696. Max hFE gain: 11. Minimum hFE gain: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 85W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 3V. Semiconductor material: silicon. Technology: 'Triple Diffused Planar Silicon Transistor'. Temperature: +150°C. Tf(max): 0.3us. Type of transistor: NPN. Vcbo: 1600V. Vebo: 5V. Original product from manufacturer: Sanyo. Quantity in stock updated on 10/31/2025, 08:53

Technical documentation (PDF)
2SC5696
27 parameters
Collector current
12A
Housing
TO-3PF (SOT399, 2-16E3A)
Housing (according to data sheet)
TO-3PMLH
Collector/emitter voltage Vceo
800V
Assembly/installation
PCB through-hole mounting
BE resistor
yes
CE diode
yes
Darlington transistor?
no
FT
kHz
Function
High-Speed
Ic(pulse)
36A
Marking on the case
C5696
Max hFE gain
11
Minimum hFE gain
3
Number of terminals
3
Pd (Power Dissipation, Max)
85W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
3V
Semiconductor material
silicon
Technology
'Triple Diffused Planar Silicon Transistor'
Temperature
+150°C
Tf(max)
0.3us
Type of transistor
NPN
Vcbo
1600V
Vebo
5V
Original product from manufacturer
Sanyo

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