NPN transistor 2SC5198-TOS, 10A, TO-3PN ( 2-16C1B ), 2-16C1B, 140V

NPN transistor 2SC5198-TOS, 10A, TO-3PN ( 2-16C1B ), 2-16C1B, 140V

Quantity
Unit price
1-4
2.91$
5-9
2.63$
10-24
2.44$
25-49
2.26$
50+
2.05$
Quantity in stock: 88

NPN transistor 2SC5198-TOS, 10A, TO-3PN ( 2-16C1B ), 2-16C1B, 140V. Collector current: 10A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Collector/emitter voltage Vceo: 140V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 170pF. FT: 30 MHz. Function: HI-FI Power Amplifier. Marking on the case: C5198 O. Max hFE gain: 160. Maximum saturation voltage VCE(sat): 2V. Minimum hFE gain: 80. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SA1941. Technology: 'Triple Diffused Planar Transistor'. Temperature: +150°C. Type of transistor: NPN. Vcbo: 140V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 08:53

Technical documentation (PDF)
2SC5198-TOS
27 parameters
Collector current
10A
Housing
TO-3PN ( 2-16C1B )
Housing (according to data sheet)
2-16C1B
Collector/emitter voltage Vceo
140V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
170pF
FT
30 MHz
Function
HI-FI Power Amplifier
Marking on the case
C5198 O
Max hFE gain
160
Maximum saturation voltage VCE(sat)
2V
Minimum hFE gain
80
Number of terminals
3
Pd (Power Dissipation, Max)
100W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.3V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SA1941
Technology
'Triple Diffused Planar Transistor'
Temperature
+150°C
Type of transistor
NPN
Vcbo
140V
Vebo
5V
Original product from manufacturer
Toshiba