NPN transistor 2SC5129, 10A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V

NPN transistor 2SC5129, 10A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V

Quantity
Unit price
1-4
2.37$
5-24
2.06$
25-49
1.84$
50+
1.61$
Equivalence available
Quantity in stock: 106

NPN transistor 2SC5129, 10A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. CE diode: yes. FT: 1.7 MHz. Function: MONITOR HA,Hi-res. Ic(pulse): 20A. Marking on the case: C5129. Max hFE gain: 30. Minimum hFE gain: 10. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 3V. Semiconductor material: silicon. Spec info: fall time 0.15..03us (64kHz). Technology: 'Triple Diffused MESA Type'. Temperature: +150°C. Tf(max): 0.3us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 08:53

Technical documentation (PDF)
2SC5129
27 parameters
Collector current
10A
Housing
TO-3PF (SOT399, 2-16E3A)
Housing (according to data sheet)
2-16E3A
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
CE diode
yes
FT
1.7 MHz
Function
MONITOR HA,Hi-res
Ic(pulse)
20A
Marking on the case
C5129
Max hFE gain
30
Minimum hFE gain
10
Number of terminals
3
Pd (Power Dissipation, Max)
50W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
3V
Semiconductor material
silicon
Spec info
fall time 0.15..03us (64kHz)
Technology
'Triple Diffused MESA Type'
Temperature
+150°C
Tf(max)
0.3us
Tf(min)
0.15us
Type of transistor
NPN
Vcbo
1500V
Vebo
5V
Original product from manufacturer
Toshiba

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