NPN transistor 2SC3303, 5A, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 80V

Quantity

Unit price

1-4

1.55$

5-24

1.36$

25-49

1.23$

50+

1.11$

Obsolete product, soon to be removed from the catalog. Last items available
Quantity in stock: 3

NPN transistor 2SC3303, 5A, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 80V. Collector current: 5A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. FT: 120 MHz. Function: High Speed Switching. Ic(pulse): 8A. Marking on the case: C3303. Max hFE gain: 240. Minimum hFE gain: 70. Number of terminals: 2. Pd (Power Dissipation, Max): 20W. Quantity per case: 1. Saturation voltage VCE(sat): 0.2V. Semiconductor material: silicon. Technology: 'Epitaxial Type (PCT Process)'. Temperature: +150°C. Tf(max): 0.1us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 100V. Vebo: 7V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 08:19

Technical documentation (PDF)

2SC3303

24 parameters

Collector current

Housing

TO-251 ( I-Pak )

Housing (according to data sheet)

TO-251AA ( I-PAK )

Collector/emitter voltage Vceo

80V

Assembly/installation

PCB through-hole mounting

120 MHz

Function

High Speed Switching

Ic(pulse)

Marking on the case

C3303

Max hFE gain

240

Minimum hFE gain

Number of terminals

Pd (Power Dissipation, Max)

20W

Quantity per case

Saturation voltage VCE(sat)

0.2V

Semiconductor material

silicon

Technology

'Epitaxial Type (PCT Process)'

Temperature

+150°C

Tf(max)

0.1us

Tf(min)

0.1us

Type of transistor

NPN

Vcbo

100V

Vebo

Original product from manufacturer

Toshiba