NPN transistor 2SC3074-Y, 5A, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V

NPN transistor 2SC3074-Y, 5A, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V

Quantity
Unit price
1-4
1.79$
5-24
1.48$
25-49
1.33$
50+
1.20$
Quantity in stock: 22

NPN transistor 2SC3074-Y, 5A, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V. Collector current: 5A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Collector/emitter voltage Vceo: 50V. Assembly/installation: surface-mounted component (SMD). FT: 120 MHz. Function: High Current Switching. Marking on the case: C3074. Max hFE gain: 240. Minimum hFE gain: 70. Note: complementary transistor (pair) 2SA1244. Number of terminals: 2. Pd (Power Dissipation, Max): 20W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.2V. Semiconductor material: silicon. Spec info: Lo-sat--Vce(sat)--0.2V. Technology: Silicon NPN Epitaxial Type (PCT process). Temperature: +150°C. Type of transistor: NPN. Vcbo: 60V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 08:19

Technical documentation (PDF)
2SC3074-Y
24 parameters
Collector current
5A
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 )
Collector/emitter voltage Vceo
50V
Assembly/installation
surface-mounted component (SMD)
FT
120 MHz
Function
High Current Switching
Marking on the case
C3074
Max hFE gain
240
Minimum hFE gain
70
Note
complementary transistor (pair) 2SA1244
Number of terminals
2
Pd (Power Dissipation, Max)
20W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.2V
Semiconductor material
silicon
Spec info
Lo-sat--Vce(sat)--0.2V
Technology
Silicon NPN Epitaxial Type (PCT process)
Temperature
+150°C
Type of transistor
NPN
Vcbo
60V
Vebo
5V
Original product from manufacturer
Toshiba