NPN transistor 2SC2713-GR, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 120V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 120V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. FT: 100 MHz. Marking on the case: DG. Max hFE gain: 700. Minimum hFE gain: 200. Note: screen printing/SMD code DG. Number of terminals: 3. Pd (Power Dissipation, Max): 150mW. Quantity per case: 1. Saturation voltage VCE(sat): 300mV. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SA1163. Type of transistor: NPN. Vcbo: 120V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 08:19