NPN transistor 2SC2705, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V

NPN transistor 2SC2705, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V

Quantity
Unit price
1-4
1.15$
5-24
0.99$
25-49
0.89$
50-99
0.81$
100+
0.71$
Equivalence available
Quantity in stock: 19

NPN transistor 2SC2705, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 150V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 1.8pF. Darlington transistor?: no. FT: 200 MHz. Function: audio amplifier. Ic(pulse): 800mA. Marking on the case: C2705. Max hFE gain: 160. Minimum hFE gain: 80. Note: 9mm. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SA1145. Technology: 'Epitaxial Type (PCT Process)'. Temperature: +150°C. Type of transistor: NPN. Vcbo: 150V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 08:19

Technical documentation (PDF)
2SC2705
29 parameters
Collector current
50mA
Housing
TO-92
Housing (according to data sheet)
TO-92MOD ( 2-5J1A )
Collector/emitter voltage Vceo
150V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
1.8pF
Darlington transistor?
no
FT
200 MHz
Function
audio amplifier
Ic(pulse)
800mA
Marking on the case
C2705
Max hFE gain
160
Minimum hFE gain
80
Note
9mm
Number of terminals
3
Pd (Power Dissipation, Max)
0.8W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SA1145
Technology
'Epitaxial Type (PCT Process)'
Temperature
+150°C
Type of transistor
NPN
Vcbo
150V
Vebo
5V
Original product from manufacturer
Toshiba

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