| Obsolete product, soon to be removed from the catalog. Last items available | |
| Quantity in stock: 10 |
NPN transistor 2SC2690A, 1.2A, TO-126 (TO-225, SOT-32), TO-126, 160V
Quantity
Unit price
1-4
1.32$
5-24
1.11$
25-49
0.96$
50-99
0.88$
100+
0.75$
| Equivalence available | |
| Quantity in stock: 85 |
NPN transistor 2SC2690A, 1.2A, TO-126 (TO-225, SOT-32), TO-126, 160V. Collector current: 1.2A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 160V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 19pF. FT: 155 MHz. Function: HF. Ic(pulse): 2.5A. Marking on the case: C2690A Y. Max hFE gain: 320. Maximum saturation voltage VCE(sat): 0.7V. Minimum hFE gain: 160. Pd (Power Dissipation, Max): 20W. Quantity per case: 1. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SA1220A. Type of transistor: NPN. Vcbo: 160V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 08:19
2SC2690A
24 parameters
Collector current
1.2A
Housing
TO-126 (TO-225, SOT-32)
Housing (according to data sheet)
TO-126
Collector/emitter voltage Vceo
160V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
19pF
FT
155 MHz
Function
HF
Ic(pulse)
2.5A
Marking on the case
C2690A Y
Max hFE gain
320
Maximum saturation voltage VCE(sat)
0.7V
Minimum hFE gain
160
Pd (Power Dissipation, Max)
20W
Quantity per case
1
Saturation voltage VCE(sat)
0.4V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SA1220A
Type of transistor
NPN
Vcbo
160V
Vebo
5V
Original product from manufacturer
ON Semiconductor