NPN transistor 2SC2240GR, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 3pF. Darlington transistor?: no. FT: 100 MHz. Marking on the case: C224GR. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Operating temperature: -55...+125°C. Pd (Power Dissipation, Max): 0.3W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SA970GR. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: NPN. Vcbo: 120V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 08:19