NPN-Transistor 2SB861, 2A, TO-220, TO-220AB, 150V. Collector current: 2A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 150V. Assembly/installation: PCB through-hole mounting. BE diode: no. BE resistor: 47. CE diode: no. Darlington transistor?: no. Function: PNP transistor. Ic(pulse): 5A. Max hFE gain: 200. Minimum hFE gain: 60. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. Quantity per case: 1. Resistor B: 10. Saturation voltage VCE(sat): 3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SD1138. Type of transistor: PNP. Vcbo: 200V. Original product from manufacturer: Hitachi. Quantity in stock updated on 10/31/2025, 07:05