NPN-Transistor 2SB709, 0.1A, SOT-23 ( TO-236 ), MINI MOLD, 25V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): MINI MOLD. Collector/emitter voltage Vceo: 25V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Cost): 2.7pF. FT: 80 MHz. Ic(pulse): 0.2A. Marking on the case: AQ. Max hFE gain: 460. Maximum saturation voltage VCE(sat): 0.5V. Minimum hFE gain: 160. Quantity per case: 1. RoHS: no. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SD601. Type of transistor: PNP. Vcbo: 25V. Vebo: 5V. Original product from manufacturer: Matsushita. Quantity in stock updated on 10/31/2025, 09:09