NPN-Transistor 2SB688, TO-3PN ( 2-16C1B ), 8A, TO-3PN, 120V

NPN-Transistor 2SB688, TO-3PN ( 2-16C1B ), 8A, TO-3PN, 120V

Quantity
Unit price
1-4
2.22$
5-9
1.88$
10-24
1.68$
25-49
1.54$
50+
1.39$
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Quantity in stock: 53

NPN-Transistor 2SB688, TO-3PN ( 2-16C1B ), 8A, TO-3PN, 120V. Housing: TO-3PN ( 2-16C1B ). Collector current: 8A. Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 120V. Assembly/installation: PCB through-hole mounting. Collector current Ic [A]: 8A, 12A. FT: 10 MHz. Frequency: 10MHz, 15MHz. Gain hfe: 20...200. Marking on the case: B668. Max hFE gain: 160. Minimum hFE gain: 55. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. Polarity: bipolar. Power: 100W. Quantity per case: 1. Saturation voltage VCE(sat): 2.5V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SD718. Temperature: +150°C. Type of transistor: PNP. Vcbo: 120V. Vebo: 5V. Voltage (collector - emitter): 120V, 140V. Original product from manufacturer: Korea Electronics Semi. Quantity in stock updated on 10/31/2025, 09:09

Technical documentation (PDF)
2SB688
26 parameters
Housing
TO-3PN ( 2-16C1B )
Collector current
8A
Housing (according to data sheet)
TO-3PN
Collector/emitter voltage Vceo
120V
Assembly/installation
PCB through-hole mounting
Collector current Ic [A]
8A, 12A
FT
10 MHz
Frequency
10MHz, 15MHz
Gain hfe
20...200
Marking on the case
B668
Max hFE gain
160
Minimum hFE gain
55
Number of terminals
3
Pd (Power Dissipation, Max)
80W
Polarity
bipolar
Power
100W
Quantity per case
1
Saturation voltage VCE(sat)
2.5V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SD718
Temperature
+150°C
Type of transistor
PNP
Vcbo
120V
Vebo
5V
Voltage (collector - emitter)
120V, 140V
Original product from manufacturer
Korea Electronics Semi.