NPN-Transistor 2SB649A, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 160V. Collector current: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 160V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 27pF. FT: 140 MHz. Max hFE gain: 200. Maximum saturation voltage VCE(sat): 1V. Minimum hFE gain: 100. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SD669A. Type of transistor: PNP. Vcbo: 180V. Vebo: 5V. Original product from manufacturer: Unisonic Technologies Co. Ltd. Quantity in stock updated on 10/31/2025, 09:09