| Quantity in stock: 4329 |
NPN-Transistor 2SB647-SMD, 1A, SOT-89, SOT-89, 80V
Quantity
Unit price
1-4
0.94$
5-24
0.76$
25-49
0.64$
50-99
0.61$
100+
0.47$
| Equivalence available | |
| Quantity in stock: 134 |
NPN-Transistor 2SB647-SMD, 1A, SOT-89, SOT-89, 80V. Collector current: 1A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. FT: 140 MHz. Function: general purpose. Ic(pulse): 2A. Max hFE gain: 320. Minimum hFE gain: 60. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Temperature: +150°C. Type of transistor: PNP. Vebo: 5V. Quantity in stock updated on 10/31/2025, 09:09
2SB647-SMD
21 parameters
Collector current
1A
Housing
SOT-89
Housing (according to data sheet)
SOT-89
Collector/emitter voltage Vceo
80V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
CE diode
no
FT
140 MHz
Function
general purpose
Ic(pulse)
2A
Max hFE gain
320
Minimum hFE gain
60
Number of terminals
3
Pd (Power Dissipation, Max)
0.9W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1V
Semiconductor material
silicon
Temperature
+150°C
Type of transistor
PNP
Vebo
5V